Avalanche Energy Rating (Eas) 500 mJ
DS Breakdown Voltage-Min 30V
Drain Current-Max (Abs) (ID) 34A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 34A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 7020pF @ 15V
Vgs(th) (Max) @ Id 1.65V @ 250μA
Rds On (Max) @ Id, Vgs 1.4m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta 191W Tc
Base Part Number CSD17556
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ