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CSD17555Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V N-ch NexFET Pwr MOSFET
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 1189
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Thickness 1mm
Width 6mm
Length 4.9mm

Technical

DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0034Ohm
Drain Current-Max (Abs) (ID) 24A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 5.3 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 18ns
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 24A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 4650pF @ 15V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Rds On (Max) @ Id, Vgs 2.7m Ω @ 25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Case Connection DRAIN
Power Dissipation 3W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Base Part Number CSD17555
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Pbfree Code yes
JESD-609 Code e3
Series NexFET?
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 3 days ago)

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