DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0034Ohm
Drain Current-Max (Abs) (ID) 24A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 24A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 4650pF @ 15V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Rds On (Max) @ Id, Vgs 2.7m Ω @ 25A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Base Part Number CSD17555
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ