Feedback Cap-Max (Crss) 36 pF
Avalanche Energy Rating (Eas) 45 mJ
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 15A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 15V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Rds On (Max) @ Id, Vgs 6m Ω @ 11A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.6W Ta
Base Part Number CSD17552
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ