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CSD17551Q3A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 12A 8VSON
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Buying Options
Total Price: USD $0.63
Unit Price: USD $0.6336
≥1 USD $0.6336
≥10 USD $0.54912
≥100 USD $0.379984
≥500 USD $0.317486
≥1000 USD $0.270195
Inventory: 1188
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Radiation Hardening No

Dimensions

Thickness 800μm
Width 3.3mm
Length 3.3mm
Height 900μm

Technical

Nominal Vgs 1.6 V
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.6V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 12 ns
Fall Time (Typ) 3.4 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 24 ns
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 15V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8 ns
Case Connection DRAIN
Power Dissipation 2.6W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.6W Ta
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Base Part Number CSD17551
Peak Reflow Temperature (Cel) 260
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series NexFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 12 Weeks

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