Max Junction Temperature (Tj) 150°C
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2.3A
Turn-Off Delay Time 279 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 8V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 347pF @ 15V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 64m Ω @ 500mA, 8V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500mW Ta
Base Part Number CSD17382
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ