Feedback Cap-Max (Crss) 44 pF
Avalanche Energy Rating (Eas) 54 mJ
Pulsed Drain Current-Max (IDM) 104A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0124Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 87A
Turn-Off Delay Time 10.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 8V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 87A Tc
Input Capacitance (Ciss) (Max) @ Vds 695pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 8.8m Ω @ 14A, 8V
Transistor Application SWITCHING
Turn On Delay Time 6.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta
Base Part Number CSD17322
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ