Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 7.7 mJ
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.03Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 8V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 879pF @ 15V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 15.1m Ω @ 8A, 8V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 16W Tc
Base Part Number CSD17318
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ