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CSD17313Q2Q1

Texas Instruments
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 5A 6SON
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Total Price: USD $0.64
Unit Price: USD $0.6424
≥1 USD $0.6424
Inventory: 1094
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status NRND (Last Updated: 5 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q100, NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17313
Number of Elements 1
Power Dissipation-Max 2.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 2.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Rise Time 3.9 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 1.3 ns
Turn-Off Delay Time 4.2 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 57A

Dimensions

Length 2mm
Width 2mm
Thickness 750μm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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