Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.042Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 4.2 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 8V
Transistor Application SWITCHING
Turn On Delay Time 2.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta
Base Part Number CSD17313
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ