Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0024Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 38A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 5240pF @ 15V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 1.5m Ω @ 35A, 8V
Transistor Application SWITCHING
Turn On Delay Time 9.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.2W Ta
Base Part Number CSD17312
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ