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CSD17310Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 100A 8SON
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8096
≥1 USD $0.8096
≥10 USD $0.66
≥100 USD $0.513304
≥500 USD $0.435072
≥1000 USD $0.354411
Inventory: 4327
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17310
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 20A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 4.5V
Rise Time 11.5ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.3 V
Feedback Cap-Max (Crss) 77 pF

Dimensions

Length 4.9mm
Width 6mm
Thickness 1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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