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CSD17304Q3

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET, N CHANNEL, 30V, 56 A, SON
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Buying Options
Total Price: USD $0.74
Unit Price: USD $0.7392
≥1 USD $0.7392
≥10 USD $0.6072
≥100 USD $0.47256
≥500 USD $0.400558
≥1000 USD $0.326304
Inventory: 1297
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17304
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 5.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 17A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 955pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Rise Time 9.1 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 3.1 ns
Turn-Off Delay Time 10.4 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.3 V

Dimensions

Length 3.3mm
Width 3.3mm
Thickness 1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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