Avalanche Energy Rating (Eas) 530 mJ
Pulsed Drain Current-Max (IDM) 249A
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 6180pF @ 15V
Vgs(th) (Max) @ Id 1.7V @ 250μA
Rds On (Max) @ Id, Vgs 1.07m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.2W Ta 191W Tc
Base Part Number CSD16556
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ