Avalanche Energy Rating (Eas) 500 mJ
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.0026Ohm
Drain Current-Max (Abs) (ID) 34A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 18.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 34A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 12.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 1.9m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.2W Ta
Base Part Number CSD16414
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ