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CSD16412Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N CHANNEL MOSFET, 25V, 52A, SON-8
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8096
≥1 USD $0.8096
≥10 USD $0.69872
≥100 USD $0.483912
≥500 USD $0.40436
≥1000 USD $0.344142
Inventory: 1142
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Thickness 1mm
Width 6mm
Length 4.9mm
Height 1.1mm

Technical

Feedback Cap-Max (Crss) 42 pF
Nominal Vgs 2 V
Dual Supply Voltage 25V
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 16V
Threshold Voltage 2V
Continuous Drain Current (ID) 52A
Turn-Off Delay Time 5.7 ns
Fall Time (Typ) 3.3 ns
Vgs (Max) +16V, -12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 7.1ns
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 14A Ta 52A Tc
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 12.5V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Rds On (Max) @ Id, Vgs 11m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 5.5 ns
Case Connection DRAIN
Power Dissipation 3W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta
Number of Elements 1
Pin Count 8
Base Part Number CSD16412
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series NexFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 16 Weeks

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