Feedback Cap-Max (Crss) 43 pF
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 56A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 14A Ta 56A Tc
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 12.5V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Rds On (Max) @ Id, Vgs 10m Ω @ 10A, 10V
Transistor Application SWITCHING
Turn On Delay Time 5.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.7W Ta
Base Part Number CSD16411
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ