Feedback Cap-Max (Crss) 52 pF
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 59A
Turn-Off Delay Time 6.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 16A Ta 59A Tc
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 12.5V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Rds On (Max) @ Id, Vgs 8.5m Ω @ 17A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta
Base Part Number CSD16410
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ