DS Breakdown Voltage-Min 25V
Drain Current-Max (Abs) (ID) 22A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 113A
Turn-Off Delay Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 22A Ta 113A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 25A, 10V
Transistor Application SWITCHING
Turn On Delay Time 11.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta
Base Part Number CSD16408
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ