Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 12.5V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Rds On (Max) @ Id, Vgs 1.6m Ω @ 40A, 10V
Transistor Application SWITCHING
Turn On Delay Time 16.6 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta
Base Part Number CSD16401
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ
Feedback Cap-Max (Crss) 230 pF
Avalanche Energy Rating (Eas) 500 mJ
Pulsed Drain Current-Max (IDM) 240A
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.0023Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 38A Ta 100A Tc