CSD16323Q3C
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Dual Cool NCh NexFET Power MOSFET
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Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 1147
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD16323
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 5.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 24A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 21A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 6.3 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.0072Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 112A
Avalanche Energy Rating (Eas) 125 mJ
Dimensions
Length 3.3mm
Width 3.3mm
Thickness 1mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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