CSD16321Q5C
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 100A 8SON
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 1353
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status NRND (Last Updated: 4 weeks ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16321
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 25A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 31A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 10V
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 25V
Nominal Vgs 1.1 V
Dimensions
Height 1.05mm
Length 5mm
Width 6mm
Thickness 1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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