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RoHS
RoHS RoHS compliant
Package 4-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description CSD13302W 12 V N-Channel NexFET? Power MOSFET 4-DSBGA
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Buying Options
Total Price: USD $0.36
Unit Price: USD $0.3608
≥1 USD $0.3608
≥10 USD $0.27984
≥100 USD $0.167992
≥500 USD $0.155549
≥1000 USD $0.105767
Inventory: 1412
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)

Physical

Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Base Part Number CSD13302
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.1m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 862pF @ 6V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Rise Time 7 ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.0285Ohm
Pulsed Drain Current-Max (IDM) 29A
DS Breakdown Voltage-Min 12V
Feedback Cap-Max (Crss) 196 pF

Dimensions

Height 625μm
Length 0m
Width 0m
Thickness 650μm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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