Avalanche Energy Rating (Eas) 20 mJ
Drain to Source Breakdown Voltage 12V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 22A Ta
Input Capacitance (Ciss) (Max) @ Vds 997pF @ 6V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Rds On (Max) @ Id, Vgs 9.3m Ω @ 5A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 4.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.7W Ta
Base Part Number CSD13302
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ