STY139N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 130A MAX247
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Buying Options
Total Price: USD $30.4
Unit Price: USD $30.404
≥1 USD $30.404
≥10 USD $25.20584
≥100 USD $23.63057
Inventory: 544
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5.3mm
Length 15.9mm
Height 24.6mm
Technical
Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 2400 mJ
Pulsed Drain Current-Max (IDM) 520A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 130A
Turn-Off Delay Time 295 ns
Fall Time (Typ) 37 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 56 ns
Gate Charge (Qg) (Max) @ Vgs 363nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 17m Ω @ 65A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 295 ns
Power Dissipation 625W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 625W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSIP-T3
Base Part Number STY139
Technology MOSFET (Metal Oxide)
Resistance 17mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? V
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 247
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 12 Weeks
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