Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 625W Tc
Element Configuration Single
Rds On (Max) @ Id, Vgs 22m Ω @ 52A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 326nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 353 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V