STWA45N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 35A TO247
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Buying Options
Total Price: USD $7.52
Unit Price: USD $7.5152
≥1 USD $7.5152
≥10 USD $6.00131
≥100 USD $5.36961
≥500 USD $4.73792
≥1000 USD $4.264137
≥3000 USD $3.995649
Inventory: 385
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STWA45
Number of Elements 1
Power Dissipation-Max 210W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 210W
Turn On Delay Time 79.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3470pF @ 100V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 9.3 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.078Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 810 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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