STW80NF06
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 80A TO-247
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 870 mJ
Drain-source On Resistance-Max 0.008Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-247AA
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 70 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 85ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 3850pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Operating Mode ENHANCEMENT MODE
Current 80A
Power Dissipation-Max 300W Tc
Voltage 60V
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW80N
Current Rating 80A
Peak Reflow Temperature (Cel) 245
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series STripFET? II
Packaging Tube
Operating Temperature 175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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