Avalanche Energy Rating (Eas) 220 mJ
Pulsed Drain Current-Max (IDM) 28.8A
Drain to Source Breakdown Voltage 950V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 7.2A
Turn-Off Delay Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 1031pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 1.35 Ω @ 3.6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ