STW78N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 69A TO247
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Buying Options
Total Price: USD $26.85
Unit Price: USD $26.84795
≥1 USD $26.84795
≥10 USD $22.02955
≥100 USD $21.3408
≥500 USD $20.653
≥1000 USD $19.96425
Inventory: 9324
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series Automotive, AEC-Q101, MDmesh? V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW78N
Number of Elements 1
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 450W
Turn On Delay Time 163 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 34.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 100V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 69A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 276A
Avalanche Energy Rating (Eas) 2000 mJ
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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