Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 68A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 68A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 272A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 9000 mJ