Drain to Source Breakdown Voltage 710V
Drain-source On Resistance-Max 0.049Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 46A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Input Capacitance (Ciss) (Max) @ Vds 6420pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 49m Ω @ 23A, 10V
Transistor Application SWITCHING
Turn On Delay Time 101 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 330W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, MDmesh? V
Operating Temperature 150°C TJ