STW60NM50N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 500V 68A TO-247
PDF
/
Buying Options
Total Price: USD $126.11
Unit Price: USD $126.11345
≥1 USD $126.11345
≥10 USD $121.9097
≥100 USD $109.29845
Inventory: 1059
Minimum: 1
-
+
Technical Details
Supply Chain
Lifecycle Status NRND (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW60N
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 446W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 446W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5790pF @ 100V
Current - Continuous Drain (Id) @ 25°C 68A Tc
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 27.5 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 68A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.043Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 272A
Avalanche Energy Rating (Eas) 551 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
STW60NM50N+price,STW60NM50N+datasheet,STW60NM50N+in stock,buy+STW60NM50N,finder+STW60NM50N,STW60NM50N+tutorials,STW60NM50N+download