STW56NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 600V 0.05 Ohm 45A MDmesh II FET
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Buying Options
Total Price: USD $21.48
Unit Price: USD $21.47855
≥1 USD $21.47855
≥10 USD $17.62345
≥100 USD $17.07245
≥500 USD $16.5224
≥1000 USD $15.9714
Inventory: 22
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.06Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 45A
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 60m Ω @ 22.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW56N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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