STW55NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Channel 600V Power MDmesh
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Buying Options
Total Price: USD $6.89
Unit Price: USD $6.89225
≥1 USD $6.89225
≥10 USD $5.65535
≥100 USD $5.47865
≥500 USD $5.30195
≥1000 USD $5.12525
Inventory: 8643
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? II
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 60MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW55N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 350W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 225 ns
Continuous Drain Current (ID) 51A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 204A
Avalanche Energy Rating (Eas) 850 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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