Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 300V
Drain-source On Resistance-Max 0.06Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 54A
Turn-Off Delay Time 116 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 221nC @ 10V
Current - Continuous Drain (Id) @ 25°C 54A Tc
Input Capacitance (Ciss) (Max) @ Vds 4960pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 150μA
Rds On (Max) @ Id, Vgs 60m Ω @ 27A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ