Avalanche Energy Rating (Eas) 500 mJ
Pulsed Drain Current-Max (IDM) 208A
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 26A
Turn-Off Delay Time 115 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Input Capacitance (Ciss) (Max) @ Vds 4850pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 150μA
Rds On (Max) @ Id, Vgs 45m Ω @ 26A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ