Avalanche Energy Rating (Eas) 850 mJ
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 45A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 22.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 417W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ