STW45N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh V MOS
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Buying Options
Total Price: USD $7.39
Unit Price: USD $7.392
≥1 USD $7.392
≥10 USD $5.90128
≥100 USD $5.28007
≥500 USD $4.658878
≥1000 USD $4.19298
≥3000 USD $3.92898
Inventory: 1118
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 78MOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Base Part Number STW45N
Number of Elements 1
Power Dissipation-Max 210W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Turn On Delay Time 79.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3375pF @ 100V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 79.5 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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