Avalanche Energy Rating (Eas) 550 mJ
Pulsed Drain Current-Max (IDM) 152A
Drain-source On Resistance-Max 0.065Ohm
Continuous Drain Current (ID) 38A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 65m Ω @ 19A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 180W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ