STW36NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 600V 0.092 Ohm 29A MDmesh II
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 345 mJ
Pulsed Drain Current-Max (IDM) 116A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 29A
Turn-Off Delay Time 106 ns
Fall Time (Typ) 67 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 34ns
Gate Charge (Qg) (Max) @ Vgs 83.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 105m Ω @ 14.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 17 ns
Power Dissipation 210W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 210W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW36N
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Resistance 105MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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