Drain to Source Breakdown Voltage 550V
Drain-source On Resistance-Max 0.08Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 33A
Turn-Off Delay Time 56 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 16.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ