STW35N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 27A 3-Pin(3+Tab) TO-247 Tube
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Buying Options
Total Price: USD $5.01
Unit Price: USD $5.0084
≥1 USD $5.0084
≥10 USD $4.1097
≥100 USD $3.9805
≥500 USD $3.85225
≥1000 USD $3.724
Inventory: 1716
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5.15mm
Length 15.75mm
Height 20.15mm
Technical
Avalanche Energy Rating (Eas) 800 mJ
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 16 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 12 ns
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 98m Ω @ 13.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 60 ns
Case Connection ISOLATED
Power Dissipation 160W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 160W Tc
Number of Elements 1
Pin Count 3
Base Part Number STW35N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 98MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? V
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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