Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m ╬? @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250╬╝A
Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
Current - Continuous Drain (Id) @ 25┬?C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 106 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 25V
DS Breakdown Voltage-Min 600V
Peak Reflow Temperature (Cel) 225
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150┬?C TJ