STW30N20
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 30A TO-247
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Technical Details
Technical
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1597pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 15.7ns
Fall Time (Typ) 8.8 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 140 mJ
Turn On Delay Time 35 ns
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW30N
Current Rating 30A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series STripFET?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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