STW28N65M2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 20A TO247
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Buying Options
Total Price: USD $3.62
Unit Price: USD $3.6168
≥1 USD $3.6168
≥10 USD $2.86939
≥100 USD $2.45945
≥500 USD $2.186158
≥1000 USD $1.87191
≥3000 USD $1.762596
Inventory: 579
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? M2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW28N
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.18Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 760 mJ
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Compliance
RoHS Status ROHS3 Compliant
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