DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 84A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 10.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 160W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, FDmesh? II
Operating Temperature 150°C TJ