STW26NM60
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 30A TO-247
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Buying Options
Total Price: USD $1.99
Unit Price: USD $1.9912
≥1 USD $1.9912
≥10 USD $1.634
≥100 USD $1.5827
≥500 USD $1.5314
≥1000 USD $1.48105
Inventory: 1158
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 135mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW26N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 313W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 313W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 26A
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 740 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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