Avalanche Energy Rating (Eas) 450 mJ
Pulsed Drain Current-Max (IDM) 88A
Drain to Source Breakdown Voltage 950V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 97 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Input Capacitance (Ciss) (Max) @ Vds 3680pF @ 100V
Vgs(th) (Max) @ Id 5V @ 150μA
Rds On (Max) @ Id, Vgs 360m Ω @ 11A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 400W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ