STW23NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-channel 600V, 20A FDMesh II
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Buying Options
Total Price: USD $8.06
Unit Price: USD $8.05505
≥1 USD $8.05505
≥10 USD $6.60915
≥100 USD $6.403
≥500 USD $6.1959
≥1000 USD $5.98975
Inventory: 1191
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.15mm
Length 15.75mm
Height 20.15mm
Technical
Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 78A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
Threshold Voltage 4V
Continuous Drain Current (ID) 19.5A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 40 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 45ns
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 21 ns
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
Pin Count 3
Base Part Number STW23N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 180mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series FDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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