STW23NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Channel 600V Power MDmesh
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Buying Options
Total Price: USD $1.52
Unit Price: USD $1.52095
≥1 USD $1.52095
≥10 USD $1.2483
≥100 USD $1.20935
≥500 USD $1.1704
≥1000 USD $1.13145
Inventory: 1357
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 76A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.18Ohm
Drain Current-Max (Abs) (ID) 19A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 9.5A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 36 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 9.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number STW23N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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